News

Bigger isn't always better. This guide covers the -3 dB definition, the tr ≈ 0.35/BW rise-time rule, the 5th-harmonic requirement for square waves, bandwidth–sample-rate matching, and the bandwidth-vs-noise-floor trade-off — a practical selection method, illustrated with the Micsig MHO high-resolution oscilloscope series.

As SiC/GaN devices switch in nanoseconds, inaccurate Vgs makes optimization impossible. This guide breaks down five common pitfalls — single-ended probing of floating gates, trusting only DC CMRR, ignoring probe input capacitance, careless attenuator selection, and confusing pin-side vs. die-internal gate voltage — with practical solutions using the Micsig 3rd-generation SigOFIT optical isolated probe MOIP series.

Micsig launches two CP-series current probes — the CP5005 and CP1503B — covering both high-current and high-bandwidth measurement needs. The CP5005 offers a maximum input of 500 Arms / 750 Apk with a 20 mm jaw for clamp-on measurement without breaking the circuit, at 5 MHz bandwidth. The CP1503B pushes bandwidth to DC–150 MHz with ≤2.67 ns rise time and 1 mA resolution for GaN/SiC gate-drive currents.

Micsig launches the flagship optically isolated probe MOIP1200P, built on the proprietary third-generation SigOFIT™ optical isolation technology. Delivering a series-leading 1.2 GHz bandwidth with a ≤350 ps rise time, it captures the fastest nanosecond switching edges of third-generation power semiconductors such as SiC and GaN. A common-mode rejection ratio up to 180 dB (still 106 dB at 1.2 GHz), 85 kVpk common-mode voltage and 1 pF input capacitance ensure safe high-voltage floating measurements; with a ±0.01 V to ±20 kV differential range, ultra-low noise below 0.45 mVrms, and zero-drift calibration-free design supporting 24/7 continuous testing.

In the SiC/GaN era, nanosecond switching and kilo-amp currents make current measurement the bottleneck of power semiconductor testing. This article compares three mainstream approaches — the Rogowski coil (no magnetic saturation, ideal for kilo-amp transients), the coaxial shunt (the 0.1% accuracy benchmark), and the high-frequency AC/DC current probe (clamp-on versatility) — covering their principles, strengths, limitations, and use cases. It provides selection guidance for six typical scenarios and recommends a complete Micsig measurement chain: RCP + CP + MOIP + MHO6.

As AI computing surges, data center power systems are moving toward higher power density, greater efficiency, and faster dynamic response. The high-speed switching of wide-bandgap semiconductors such as SiC and GaN introduces measurement challenges including high common-mode voltage, high dv/dt, and fast switching edges. Built on an electrical-optical-electrical isolation architecture with ADHOMT analog-digital hybrid optical modulation technology, the Micsig SigOFIT™ third-generation MOIP series optically isolated probes deliver 200 MHz–1.2 GHz bandwidth, a CMRR of up to 108 dB at 1 GHz, input capacitance as low as 1 pF, automatic calibration, and flexible attenuator configuration — providing a professional measurement solution for AI power systems and SiC/GaN power semiconductor testing.

Micsig MO3 series high-resolution modular oscilloscope: 12-bit ADC, ≤85 μVrms noise floor, 360 Mpts deep memory, and a 30 mm slim chassis with multi-unit synchronization up to 128 channels. Built-in decoding for CAN, SPI, I²C, 1553B and more, with HDMI direct output and SCPI/API support — ideal for power ripple, power electronics, embedded bus, and automated test applications.