麦科信
  • HOME
  • News
  • Product Launch | Optically Isolated Probe MOIP1200P: 1.2 GHz Bandwidth Flagship Powered by Third-Generation SigOFIT™ Technology

Product Launch | Optically Isolated Probe MOIP1200P: 1.2 GHz Bandwidth Flagship Powered by Third-Generation SigOFIT™ Technology

Release Time:2026-09-29

Micsig launches the flagship optically isolated probe MOIP1200P, built on the proprietary third-generation SigOFIT™ optical isolation technology. Delivering a series-leading 1.2 GHz bandwidth with a ≤350 ps rise time, it captures the fastest nanosecond switching edges of third-generation power semiconductors such as SiC and GaN. A common-mode rejection ratio up to 180 dB (still 106 dB at 1.2 GHz), 85 kVpk common-mode voltage and 1 pF input capacitance ensure safe high-voltage floating measurements; with a ±0.01 V to ±20 kV differential range, ultra-low noise below 0.45 mVrms, and zero-drift calibration-free design supporting 24/7 continuous testing.

Micsig officially launches the MOIP1200P, its flagship optically isolated probe built on third-generation SigOFIT™ optical isolation technology. Topping the MOIP series with the highest bandwidth, the new probe is purpose-engineered for high-voltage, high-frequency testing of third-generation power semiconductors such as SiC and GaN. Paired with Micsig high-resolution oscilloscopes, it forms a complete solution for high-voltage floating and isolated measurements.

1. Product Overview

Third-generation power semiconductors such as SiC and GaN switch at nanosecond speeds, bus voltages keep climbing, and common-mode interference is becoming increasingly severe. Conventional high-voltage differential probes struggle to balance bandwidth, common-mode rejection and safety. The MOIP1200P, by contrast, is built on Micsig's proprietary SigOFIT™ optical isolation technology, using electrical–optical–electrical conversion with fiber-optic transmission and laser-powered supply to achieve complete electrical isolation between the device under test and the oscilloscope — fully eliminating ground loops. It is purpose-built for high-voltage, high-frequency testing of third-generation power semiconductors.

 

 

MOIP1200P optically isolated probe

2. Key Advantages

• Up to 1.2 GHz bandwidth, the highest in the MOIP series — a 20% improvement over the MOIP1000P — with a rise time of ≤350 ps to capture the fastest switching edges of GaN devices;

• Common-mode rejection ratio (CMRR) up to 180 dB at DC, still holding 106 dB at the 1.2 GHz maximum frequency to effectively suppress high-frequency common-mode oscillation;

• Up to 85 kVpk common-mode voltage, combined with short leads and input capacitance as low as 1 pF, enabling safe testing of sensitive nodes such as GaN gate drivers;

• Differential measurement range from ±0.01 V to ±20 kV (with optional attenuator heads), noise floor as low as <0.45 mVrms, and DC gain accuracy better than 1%;

• ADHOMT analog–digital hybrid laser modulation technology with zero temperature drift and no manual calibration required, measure-on-power-up, supporting 365×24 continuous testing;

• Standard BNC interface, compatible with oscilloscopes of all brands.

3. Series Specifications

Shared specification table for the MOIP1200P and the MOIP series:

 

 

 

Amplitude-frequency response curves of the third-generation optically isolated MOIP series

4. Typical Applications

Covers the key stages of power device testing:

• SiC/GaN double-pulse testing: Measure half-bridge floating switch-node voltages; paired with a current probe and the MHO6 series high-resolution oscilloscope, 12-bit vertical resolution preserves waveform detail for accurate switching-loss evaluation;

• GaN gate-driver analysis: Safely measure high-side gate waveforms under high common-mode rejection; the 1 pF low input capacitance does not disturb the sensitive gate node;

• Inverter and motor-drive testing: Synchronously measure high-voltage floating nodes — the higher the bus voltage, the more the 85 kVpk common-mode voltage capability comes into play;

• Device reliability qualification: Combined with power-cycling and HTOL aging test benches, continuously monitor device switching-node waveforms over long durations; calibration-free, zero-drift operation supports 365×24 uninterrupted testing.

 

Typical application scenarios of the MOIP probe

5. Purchase & Inquiries

For more product information and availability of the MOIP1200P, please visit the Micsig website at www.micsig.com, or contact sales@micsig.com.

 

About Micsig: Founded in 2012, Shenzhen Micsig Technology Co., Ltd. is a nationally recognized specialized and innovative enterprise, dedicated to R&D of cutting-edge technologies in the signal measurement and testing field. The company built the industry's first fully touchscreen tablet oscilloscope and launched optically isolated probes based on its self-developed SigOFIT™ technology, filling a domestic gap. Its product portfolio spans high-resolution oscilloscopes, tablet oscilloscopes, optically isolated probes, high-voltage differential probes and current probes, widely serving new-energy power generation, energy storage, new-energy vehicles, industrial power supplies, rail transit and motor drives.


More News

Product Launch | Micsig Current Probes CP5005 & CP1503B: The High-Current and High-Bandwidth Duo

Product Launch | Micsig Current Probes CP5005 & CP1503B: The High-Current and High-Bandwidth Duo

2026-09-29

Product Launch | Optically Isolated Probe MOIP1200P: 1.2 GHz Bandwidth Flagship Powered by Third-Generation SigOFIT™ Technology

Product Launch | Optically Isolated Probe MOIP1200P: 1.2 GHz Bandwidth Flagship Powered by Third-Generation SigOFIT™ Technology

2026-09-29

The "Three Workhorses" of Power Device Current Measurement: Rogowski Coil vs. Coaxial Shunt vs. High-Frequency Current Probe

The "Three Workhorses" of Power Device Current Measurement: Rogowski Coil vs. Coaxial Shunt vs. High-Frequency Current Probe

2026-09-02

High-Speed Power Testing in the AI Computing Era: Micsig SigOFIT™ MOIP Optical-Fiber Isolated Probes for Data Center Power and Power Semiconductor Testing

High-Speed Power Testing in the AI Computing Era: Micsig SigOFIT™ MOIP Optical-Fiber Isolated Probes for Data Center Power and Power Semiconductor Testing

2026-09-02

license